CoolMOSTM Power Transistor
Features
PG-TO247
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary | VDS | 600 | V | | RDS(on),max | 0.118 | Ω | | ID | 34 | A |
Maximum ratings, at T j =25 °C, unless otherwise specified | Parameter | Symbol | Conditions | Value | Unit | | Continuous drain current | I D | T C=25 °C | 34.1 | A | | T C=100 °C | 21.6 | A | | Pulsed drain current2) | I D,pulse | T C=25 °C | 85 | A | | Avalanche energy, single pulse | E AS | I D=10 A, V DD=50 V | 1300 | mJ | | Avalanche energy, repetitive t AR 2),3) | E AR | I D=20 A, V DD=50 V | 1 | mJ | | Avalanche current, repetitive t AR 2),3) | I AR | | 20 | A | | Drain source voltage slope | dv /dt | I D=34.1 A, V DS=480 V, T j =125 °C | 80 | V/ns | | Reverse diode dv /dt | dv /dt | I S=34.1 A, V DS=480 V, T j =125 °C | 40 | V/ns | | Maximum diode commutation speed | di /dt | 600 | A/µs | | Gate source voltage | V GS | static | ±20 | V | | AC (f >1 Hz) | ±30 | V | | Power dissipation | P tot | T C=25 °C | 313 | W | | Operating and storage temperature | T j , T stg | | -55 ... 150 | °C |
PG-TO247-3-21-41
Stock Offer (Hot Sell) | Part NO. | Q'ty | MFG | D/C | Package |
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