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SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor

Model Number SPW35N60CFD
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 600 V 34.1A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
Pulsed drain current 85 A
Avalanche current, repetitive t AR 20 A
Drain source voltage slope 80 V/ns
Reverse diode dv /dt 40 V/ns
Power dissipation 313 W
Operating and storage temperature -55 to 150 °C
Detailed Product Description

 
CoolMOSTM Power Transistor
 
Features                                                                                                                  PG-TO247
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
 
Product Summary

VDS600V
RDS(on),max0.118
ID34A

 
 
Maximum ratings, at T j =25 °C, unless otherwise specified

ParameterSymbolConditionsValueUnit
Continuous drain currentDT C=25 °C34.1A
T C=100 °C21.6A
Pulsed drain current2)I D,pulseT C=25 °C85A
Avalanche energy, single pulseE ASI D=10 A, V DD=50 V1300mJ
Avalanche energy, repetitive t AR 2),3)E ARI D=20 A, V DD=50 V1mJ
Avalanche current, repetitive t AR 2),3)I AR 20A
Drain source voltage slopedv /dt

I D=34.1 A,

V DS=480 V, T j =125 °C

80V/ns
Reverse diode dv /dtdv /dt

 

I S=34.1 A, V DS=480 V,

T j =125 °C

 

40V/ns
Maximum diode commutation speeddi /dt600A/µs
Gate source voltageV GSstatic±20V
AC (f >1 Hz)±30V
Power dissipationP totT C=25 °C313W
Operating and storage temperatureT j , T stg -55 ... 150°C

 
PG-TO247-3-21-41

 
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Product Tags: multi emitter transistor   silicon power transistors  
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