51 - 60 of 1129
silicon npn power transistors
Selling leads
|
...Power Transistor MOSFET N-Ch Digital Features 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) =5Ω@VGS=2.7V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level ...
2024-12-09 22:37:47
|
|
... in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors show exceptional high gain ...
2024-12-09 22:37:47
|
|
Silicon PNP DarliCM GROUPon Power Transistors DESCRIPTION ·With TO-220C package ·DARLICM GROUPON ·High DC current gain ·Low collector saturation ...
2024-12-09 22:38:38
|
|
... Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25...
2024-12-09 22:41:27
|
|
Silicon PNP DarliCM GROUPon Power Transistors TIP125/126/127 DESCRIPTION ·With TO-220C package ·DARLCM GROUPON ·High DC durrent gain ·Low collector ...
2024-12-09 22:41:27
|
|
MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS Features • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) ...
2024-12-09 22:38:51
|
|
...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ...
2024-12-09 22:37:47
|
|
... Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer ...
2024-12-09 22:41:27
|
|
... description/ordering information The ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current DarliCM GROUPon ...
2024-12-09 22:41:27
|
|
1. General description The 74AHC595; 74AHCT595 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They ...
2024-12-09 22:41:27
|