IRF7424TRPBF HEXFETPower MOSFET testing power transistors
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Description
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics and multiple-die capability making
it ideal in a variety of power applications. With these
improvements, multiple devices can be used in an application with
dramatically reduced board space. The package is designed for vapor
phase, infrared, or wave soldering technique
| | Parameter | Max. | Units |
| VDS | Drain- Source Voltage | -30 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ -10V | -11 | A |
| ID @ TA= 70°C | Continuous Drain Current, VGS @ -10V | -9.3 |
| IDM | Pulsed Drain Current | -47 |
| PD @TA = 25°C | Power Dissipation | 2.5 | W |
| PD @TA = 70°C | Power Dissipation | 1.6 |
| | Linear Derating Factor | 20 | mW/°C |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
STOCK LIST
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