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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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MJD122G Complementary DarliCM GROUPon Power Transistor switching power mosfet low power mosfet

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

MJD122G Complementary DarliCM GROUPon Power Transistor switching power mosfet low power mosfet
Brand Name ONSEMI
Model Number MJD122G
Certification Original Factory Pack
Place of Origin Original
Minimum Order Quantity 50pcs
Price negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 5200PCS
Delivery Time 1 day
Packaging Details please contact me for details
Description Bipolar (BJT) Transistor NPN - DarliCM GROUPon 100 V 8 A 4MHz 20 W Surface Mount DPAK
VCEO 100 Vdc
VCB 100 Vdc
VEB 5 Vdc
IC 8 16 Adc
IB 120 mAdc
Detailed Product Description

MJD122G Complementary DarliCM GROUPon Power Transistor switching power mosfet low power mosfet

Designed for general purpose amplifier and low speed switching applications.

 

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V

• Pb−Free Packages are Available

 

 

 

 

TYPICAL ELECTRICAL CHARACTERISTICS

 

 

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Product Tags: power mosfet ic   silicon power transistors  
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