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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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p channel mosfet transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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p channel mosfet transistor

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... V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer ... 2024-12-09 22:38:51
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from ... 2024-12-09 22:41:27
NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors ... 2024-12-09 22:38:51
NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are ... 2024-12-09 22:41:27
NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-channel enhancement mode power field ... 2024-12-09 22:41:27
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ... 2024-12-09 22:41:27
...power transistor high power mosfet transistors Features ■ PNP transistor Applications ■ Linear and switching industrial equipment Description This ... 2024-12-09 22:41:27
IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V < 2.2 Ω 3.6 A TO-220 ■ TYPICAL RDS(on) = 1.8 ... 2024-12-09 22:38:38
... CAPACITANCE AND GATE CHARGE ■ LOW GATE INPUT RESISTANCE DESCRIPTION The STx21NM50N is realized with the second generation of MDmesh Technology. ... 2024-12-09 22:38:51
SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − ... 2024-12-09 22:38:51
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