China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
3
Home > Products > Electronic IC Chips >

STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

Browse Categories

ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
View Contact Details

STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

Model Number STF21NM50N
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 9500pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 500 V 18A (Tc) 30W (Tc) Through Hole TO-220FP
Drain-source Voltage 500 V
Drain-gate Voltage 500 V
Gate- source Voltage ±25 V
Drain Current (pulsed) 72 A
Peak Diode Recovery voltage slope 15 V/ns
Max. Operating Junction Temperature 150 °C
Detailed Product Description

 

STP21NM50N-STF21NM50N-STW21NM50N

STB21NM50N - STB21NM50N-1

N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET

 

General Features

 

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

 

DESCRIPTION

The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

 

APPLICATIONS

The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

 

 

 

 

 

Absolute Maximum ratings

SymbolParameterValueUnit
  TO-220 / D2PAK / I2PAK / TO-247TO-220FP 
VDSDrain-source Voltage (VGS = 0)500V
VDGRDrain-gate Voltage (RGS = 20 kΩ)500V
VGSGate- source Voltage±25V
IDDrain Current (continuous) at TC = 25°C1818 (*)A
IDDrain Current (continuous) at TC = 100°C1111 (*)A
IDM (•)Drain Current (pulsed)7272 (*)A
PTOTTotal Dissipation at TC = 25°C14030W
 Derating Factor1.120.23W/°C
dv/dt(1)Peak Diode Recovery voltage slope15V/ns
VisoInsulation Winthstand Voltage (DC)--2500V
TstgStorage Temperature–55 to 150°C
TjMax. Operating Junction Temperature150°C

(•) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS

 

 

 

 

Stock Offer (Hot Sell)

Part No.QuantityBrandD/CPackage
PQ20VZ1122989SHARP14+TO-252-5
PRF947900006+SOT-323
PRG21BC4R7MM1RA34000MURATA08+SMD0805
PRTR5V0U2AX8000016+SOT-143
PS1240P02BT33000TDK13+SMD
PS2621L-E38684NEC16+SOP-6
PS2703-1-F3-A36000NEC10+SOP-4
PS2802-1-F3-A5108NEC16+SOP-4
PS2805C-1-F3-A6468RENESAS16+SOP-4
PS2805C-4-F3-A11883RENESAS16+SOP-16
PS2911-1-F3-A8655RENESAS14+SOP-4
PS8701-F3-AX16094RENESAS15+SOP-5
PSMN4R0-40YS1005916+SOT669
PT224865000PTC16+DIP-16
PT231499000PTC14+SOP-28
PT4207ESOH12071POWTECH11+SOP-8
PTH08T210WAZT958TI16+DIP-14
PUMD315200016+SOT-363
PUMH102100014+SOT-363
PV0402AP7660I0R15+SOP-8
PVT3126304IOR13+DIP-6
PVT312L5302IOR14+SOP-6
PZT2222A81000FSC13+SOT-223
PZT2222AT1G54000ON16+SOT-223
PZTA42T1G35000ON16+SOT-223
PZTA92T1G36000ON13+SOT-223
Q13FC135000040038000EPSON13+SMD
QFET-3000-TR1G16165AVAGO16+SOT-343
R1LP0408CSB-7LI3865RENESAS16+TSOP-32
R2A15120FA5054RENESAS14+QFP48

 

 

 

 

Product Tags: power mosfet ic   multi emitter transistor  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: ChongMing Group (HK) Int'l Co., Ltd
Subject:
Message:
Characters Remaining: (80/3000)