STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

Model Number	STF21NM50N
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	9500pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 500 V 18A (Tc) 30W (Tc) Through Hole TO-220FP
Drain-source Voltage	500 V
Drain-gate Voltage	500 V
Gate- source Voltage	±25 V
Drain Current (pulsed)	72 A
Peak Diode Recovery voltage slope	15 V/ns
Max. Operating Junction Temperature	150 °C

Detailed Product Description

STP21NM50N-STF21NM50N-STW21NM50N

STB21NM50N - STB21NM50N-1

N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET

General Features

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

DESCRIPTION

The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

APPLICATIONS

The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Absolute Maximum ratings

Symbol	Parameter	Value		Unit
		TO-220 / D²PAK / I²PAK / TO-247	TO-220FP
V_DS	Drain-source Voltage (V_GS = 0)	500		V
V_DGR	Drain-gate Voltage (R_GS = 20 kΩ)	500		V
V_GS	Gate- source Voltage	±25		V
I_D	Drain Current (continuous) at T_C = 25°C	18	18 (*)	A
I_D	Drain Current (continuous) at T_C = 100°C	11	11 (*)	A
I_DM (•)	Drain Current (pulsed)	72	72 (*)	A
P_TOT	Total Dissipation at T_C = 25°C	140	30	W
	Derating Factor	1.12	0.23	W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	15		V/ns
Viso	Insulation Winthstand Voltage (DC)	--	2500	V
Tstg	Storage Temperature	–55 to 150		°C
Tj	Max. Operating Junction Temperature	150		°C

(•) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) I_SD ≤ 18 A, di/dt ≤ 400 A/µs, V_DD =80% V_(BR)DSS

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

PQ20VZ11	22989	SHARP	14+	TO-252-5
PRF947	9000		06+	SOT-323
PRG21BC4R7MM1RA	34000	MURATA	08+	SMD0805
PRTR5V0U2AX	80000		16+	SOT-143
PS1240P02BT	33000	TDK	13+	SMD
PS2621L-E3	8684	NEC	16+	SOP-6
PS2703-1-F3-A	36000	NEC	10+	SOP-4
PS2802-1-F3-A	5108	NEC	16+	SOP-4
PS2805C-1-F3-A	6468	RENESAS	16+	SOP-4
PS2805C-4-F3-A	11883	RENESAS	16+	SOP-16
PS2911-1-F3-A	8655	RENESAS	14+	SOP-4
PS8701-F3-AX	16094	RENESAS	15+	SOP-5
PSMN4R0-40YS	10059		16+	SOT669
PT2248	65000	PTC	16+	DIP-16
PT2314	99000	PTC	14+	SOP-28
PT4207ESOH	12071	POWTECH	11+	SOP-8
PTH08T210WAZT	958	TI	16+	DIP-14
PUMD3	152000		16+	SOT-363
PUMH10	21000		14+	SOT-363
PV0402AP	7660	I0R	15+	SOP-8
PVT312	6304	IOR	13+	DIP-6
PVT312L	5302	IOR	14+	SOP-6
PZT2222A	81000	FSC	13+	SOT-223
PZT2222AT1G	54000	ON	16+	SOT-223
PZTA42T1G	35000	ON	16+	SOT-223
PZTA92T1G	36000	ON	13+	SOT-223
Q13FC1350000400	38000	EPSON	13+	SMD
QFET-3000-TR1G	16165	AVAGO	16+	SOT-343
R1LP0408CSB-7LI	3865	RENESAS	16+	TSOP-32
R2A15120FA	5054	RENESAS	14+	QFP48

Product Tags: power mosfet ic multi emitter transistor

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