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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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p channel mosfet transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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p channel mosfet transistor

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... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... 2024-12-09 22:41:27
... transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol Parameter Value Units ... 2024-12-09 22:41:27
... applications. Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low ... 2024-12-09 22:41:27
...Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching ... 2024-12-09 22:41:39
FDS6681Z Mosfet Power Transistor MOSFET 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using ... 2024-12-09 22:37:47
...Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ... 2024-12-09 22:38:51
SI4435DY 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced ... 2024-12-09 22:41:27
... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ... 2024-12-09 22:37:47
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are ... 2024-12-09 22:38:38
...Mosfet Power Transistor MOSFET MOSFET; -80V P-Chan PowerTrench Features MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A MaxrDS(on) =233mΩatVGS =-4.5V,ID =-1... 2024-12-09 22:37:47
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