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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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p channel mosfet transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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p channel mosfet transistor

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1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The ... 2024-12-09 22:41:27
General Purpose Power Mosfet Transistor KSP2907A Equivalent PNP Amplifier ​ Features • Collector-Emitter Voltage: VCEO= 60V • Collector Power ... 2024-12-09 22:41:27
High Power Mosfet Transistors LNK306GN-TL Off Line Switcher IC LNK306GN-TL LinkSwitch-TN Family Lowest Component Count, Energy-Effi ... 2024-12-09 22:41:27
High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16 DESCRIPTION Available either in through-hole or surface-mount packages, the ... 2024-12-09 22:41:27
Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate ‹ Features ·With TO-220AB package ·Glass passivated, sensitive gate ... 2024-12-09 22:41:27
Features ► Integrated half-bridge package ► Reduces the part count by half ► Facilitates better PCB layout ► Key parameters optimized for Class-D ... 2024-12-09 22:38:38
N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Features Order codes VDSS @TJ max... 2024-12-09 22:38:51
Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Technology for Low RDS(on) • −1.8 V Rated for Low Voltage Gate ... 2024-12-09 22:41:27
FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.... 2024-12-09 22:41:27
BUK95/9608-55A TrenchMOS™ logic level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ ... 2024-12-09 22:38:51
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