N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET

(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247

Features

■ The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities

DESCRIPTION

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters

 
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