Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Brand Name	ISC
Model Number	BT136-600E
Certification	Original Factory Pack
Place of Origin	China
Minimum Order Quantity	4000pcs
Price	Negotiation
Payment Terms	T/T, Western Union,PayPal,
Supply Ability	240000PCS
Delivery Time	1 Day
Packaging Details	please contact me for details
Description	Glass passivated, sensitive gate triacs
Repetitive peak off-state voltage	600 V
Average on-state current	4 A
Non-repetitive peak on-state current	25 A
Storage temperature	-45～150 ℃
Package	TO-220AB

Detailed Product Description

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Features

·With TO-220AB package

·Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

QUICK REFERENCE DATA

SYMBOL	PARAMETER	VALUE	UNIT
VDRM	Repetitive peak off-state voltage	600	V
VRRM	Repetitive peak off-state voltage	600	V
IT(AV)	Average on-state current	4	A
ITSM	Non-repetitive peak on-state current	25	A
Tstg	Storage temperature	-45～150

PIN CONFIGURATION SYMBOL

Triacs BT136 series E sensitive gate

MECHANICAL DATA

Product Tags: multi emitter transistor silicon power transistors

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