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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Brand Name ISC
Model Number BT136-600E
Certification Original Factory Pack
Place of Origin China
Minimum Order Quantity 4000pcs
Price Negotiation
Payment Terms T/T, Western Union,PayPal,
Supply Ability 240000PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description Glass passivated, sensitive gate triacs
Repetitive peak off-state voltage 600 V
Average on-state current 4 A
Non-repetitive peak on-state current 25 A
Storage temperature -45~150 ℃
Package TO-220AB
Detailed Product Description

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

 

 

 

 

‹ Features

 

·With TO-220AB package

 

·Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

 

‹

 

 

QUICK REFERENCE DATA

SYMBOL PARAMETER  VALUE UNIT
VDRMRepetitive peak off-state voltage 600 V
VRRM Repetitive peak off-state voltage 600 V
IT(AV) Average on-state current A
ITSM Non-repetitive peak on-state current25 A
Tstg Storage temperature -45~150  

 

PIN CONFIGURATION               SYMBOL

 

Triacs BT136 series E sensitive gate

 

 

MECHANICAL DATA

 

 

Product Tags: multi emitter transistor   silicon power transistors  
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