SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo View Contact Details

SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

Model Number	SI4435DY
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	8600pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	P-Channel 30 V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Drain-Source Voltage	–30 V
Gate-Source Voltage	±20 V
Drain Current – Continuous	–8.8 A
Power Dissipation for Single Operation	2.5 W
Operating and Storage Junction Temperature Range	–55 to +175 °C
Thermal Resistance, Junction-to-Case	25 °C/W

Detailed Product Description

SI4435DY

30V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Applications

· Power management

· Load switch

· Battery protection

Features

· –8.8 A, –30 V R_DS(ON) = 20 mW @ VGS = –10 V

R_DS(ON) = 35 mW @ VGS = –4.5 V

· Low gate charge (17nC typical)

· Fast switching speed

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability

Absolute Maximum Ratings TA=25℃ unless otherwise noted

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current – Continuous (Note 1a) – Pulsed	–8.8	A
I_D	Drain Current – Continuous (Note 1a) – Pulsed	–50	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
T_J, T_STG	Operating and Storage Junction Temperature Range	–55 to +175	°C

Thermal Characteristics

R_θJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	°C/W
R_θJA	Thermal Resistance, Junction-to-Ambient (Note 1c)	125	°C/W
R_θJC	Thermal Resistance, Junction-to-Case (Note 1)	25	°C/W

Package Marking and Ordering Information

Device Marking	Device	Reel Size	Tape width	Quantity
SI4435DY	SI4435DY	13’’	12mm	2500 units

Product Tags: power mosfet ic silicon power transistors

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