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n channel power switch
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... trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM ...
2024-12-09 22:41:27
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...Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SC-70 Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and ...
2024-12-09 22:48:58
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... Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs ...
2024-12-09 22:59:53
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...SWITCH IRFB4229PbF Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications ...
2024-12-09 22:38:51
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...Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced ...
2024-12-09 22:38:51
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... ● ANALOG SIGNAL RANGE: ±15V ● STANDBY POWER: 7.5mW typ ● TRUE SECOND SOURCE DESCRIPTION The MPC508A is an 8-channel single-ended analog multiplexe...
2024-12-09 22:41:39
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... ● ANALOG SIGNAL RANGE: ±15V ● STANDBY POWER: 7.5mW typ ● TRUE SECOND SOURCE DESCRIPTION The MPC508A is an 8-channel single-ended analog multiplexe...
2024-12-09 22:41:39
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... Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is ...
2024-12-09 22:37:59
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...Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are ...
2024-12-09 22:38:51
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...Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are ...
2024-12-09 22:41:27
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