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2N7002PW Surface Mount NPN PNP Transistors N Channel 60V 310mA ( Ta ) 260mW

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2N7002PW Surface Mount NPN PNP Transistors N Channel 60V 310mA ( Ta ) 260mW

Model Number 2N7002PW
Place of Origin Malaysia
Minimum Order Quantity 3000 PCS
Price Negotiation
Supply Ability T/T, Western Union , ESCROW
Delivery Time 30000PCS
Packaging Details 3000PCS/REEL
Description N-Channel 60 V 315mA (Ta) 260mW (Ta) Surface Mount SOT-323
Categories Transistors - FETs, MOSFETs - Single
Drain to Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta)
Drive Voltage 10V
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Detailed Product Description

2N7002PW NPN PNP Transistors N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SC-70
 
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
 Motor Control 

Power Management Functions
 
 
Features
Low On-Resistance 
Low Gate Threshold Voltage 
Low Input Capacitance 
Fast Switching Speed 
Small Surface Mount Package 
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 
Halogen and Antimony Free. “Green” Device (Notes 3 & 4) 
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data

Case: SOT23 
Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020 
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 
Terminal Connections: See Diagram 
Weight: 0.008 grams (approximate)
 
 
 
 

Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
 Transistors - FETs, MOSFETs - Single
ManufacturerNexperia USA Inc.
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
FET Feature-
Power Dissipation (Max)260mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70
Package / CaseSC-70, SOT-323



























Product Tags: resistor equipped transistor   epitaxial planar pnp transistor  
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