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CHONGMING GROUP (HK) INT'L CO., LTD.
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200V N-Channel MOSFET FQP32N20C

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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200V N-Channel MOSFET FQP32N20C

Model Number FQP32N20C
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price negotiation
Payment Terms T/T, Western Union, PayPal
Supply Ability 2000pcs
Delivery Time 1 day
Packaging Details please contact me for details
Description N-Channel 200 V 28A (Tc) 156W (Tc) Through Hole TO-220-3
feature 1 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V
feature 2 Low gate charge ( typical 82.5 nC)
feature 3 Low Crss ( typical 185 pF)
feature 4 Fast switching
feature 5 100% avalanche tested
feature 6 Improved dv/dt capability
Detailed Product Description

General Description

 

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supplies and motor controls.

 

 

Features

 

• 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V

• Low gate charge ( typical 82.5 nC)

• Low Crss ( typical 185 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical Characteristics

 

 

 

Product Tags: multi emitter transistor   silicon power transistors  
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