200V N-Channel MOSFET FQP32N20C
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features
• 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V • Low gate charge ( typical 82.5 nC) • Low Crss ( typical 185 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
Typical Characteristics
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Product Tags: multi emitter transistor silicon power transistors |