China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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Mr.David Lee
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high voltage transistor

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8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m ... 2024-12-09 21:52:33
20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ... 2024-12-09 21:52:33
HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The ... 2024-12-09 21:52:33
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate ... 2024-12-09 21:52:33
AOD508/AOI508 30V N-Channel AlphaMOS​ General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High ... 2024-12-09 21:52:33
MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 Plastic-Encapsulated Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications High ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ General ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5mΩ RDS(ON) (at VGS=4.5V) < 18mΩ General ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ... 2024-12-09 21:52:33
SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4... 2024-12-09 21:52:33
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