AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive
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60V N-Channel AlphaSGT HXY4266
Product Summary
General Description
• Low RDS(ON) • Logic Level Gate Drive • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant
Applications
• High Frequency Switching and Synchronous Rectification
Electrical Characteristics (T =25°C unless otherwise noted)
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT =25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
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