291 - 300 of 428
high voltage transistor
Selling leads
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6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . ...
2024-12-09 18:42:28
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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 18:42:28
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 18:42:28
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HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 18:45:20
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AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , ...
2024-12-09 19:03:13
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Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power ...
2024-12-09 19:11:03
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6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . ...
2024-12-09 21:52:33
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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 21:52:33
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 21:52:33
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HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 21:52:33
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