WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
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Detailed Product Description
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QM4803D N-Ch and P-Channel MOSFET
Description
The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The WSF6012 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Applications
Product Summery Absolute Maximum Ratings
Thermal Data N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise
noted) Guaranteed Avalanche Characteristics Diode Characteristics Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with
2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦
2% 3. The power dissipation is limited by 150℃ junction temperature 4. The data is theoretically the same as ID and IDM , in real
applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise
noted) Guaranteed Avalanche Characteristics Diode Characteristics Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦
2% 3. The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real
applications , should be limited by total power dissipation. N-Channel Typical Characteristics P-Channel Typical Characteristics |
| Product Tags: n channel mosfet transistor high voltage transistor |
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