China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number WSF3012
Type Mosfet Power Transistor
Junction temperature: 150℃
RDSON 50mΩ
Features Super Low Gate Charge
Usage High Frequency Point-of-Load Synchronous
Detailed Product Description
WSF3012 N-Ch and P-Channel MOSFET

 

Description

 

The WSF3012 is the highest performance trench N-ch
and P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge for
most of the synchronous buck converter applications .
The WSF3012 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full function
reliability approved.

 

Product Summery

 

 

 

Features
  • z Advanced high cell density Trench technology
  • z Super Low Gate Charge
  • z Excellent CdV/dt effect decline
  • z 100% EAS Guaranteed
  • z Green Device Available

 

 

Applications

 

z High Frequency Point-of-Load Synchronous
  Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter

 

Absolute Maximum Ratings

 

 

 

Thermal Data
 
 
 
 
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
 
 
 
Guaranteed Avalanche Characteristics
 
 
 
Diode Characteristics
 
 
 
 
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
 
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
 
 
Guaranteed Avalanche Characteristics
 
 
 
Diode Characteristics
 
 
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A
4. The power dissipation is limited by 150℃ junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
N-Channel Typical Characteristics
 
 
 
 
P-Channel Typical Characteristics
 
 
 
Product Tags: high current mosfet switch   high voltage transistor  
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