6G03S 30V Mosfet Power Transistor Enhancement Mode MOSFET ID 6.5A
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Detailed Product Description
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6G03S 30V N+P-Channel Enhancement Mode MOSFET
Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications
General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS(ON) < 16mΩ@ VGS=10V P-Channel VDS = -30V,ID = -7A RDS(ON) < 37mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package
Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Package Marking and Ordering Information
Absolute Maximum Ratings (TC=25℃unless otherwise noted) N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction
temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 30V N+P-Channel EnhancemeN- Channel Typical Electrical and Thermal
Characteristics (Curves) |
| Product Tags: n channel mosfet transistor high current mosfet switch |
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