HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated
|
Detailed Product Description
SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET
Product Summary
VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V
FEATURE High power and current handing capability Lead free product is acquired Surface mount package
Applications
Battery Switch DC/DC Converter
Maximum ratings (Ta=25℃ unless otherwise noted) |
Product Tags: high current transistor logic mosfet switch |
Related Products
![]() |
60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET |
![]() |
60N03PIT 30V N Channel Mosfet Transistor , High Power Transistor |
![]() |
50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃ |
![]() |
G40N10 100V Mosfet Power Transistor , N Channel Transistor Fast Switching |
![]() |
18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application |
![]() |
2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID 6.0 A |
Email to this supplier