421 - 430 of 448
high power pnp transistor
Selling leads
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... to form a level shifted high side switch, and for a host of other FEATURES VDS =200V,ID =5A RDS(ON)
2024-12-09 18:45:20
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... to form a level shifted high side switch, and for a host of other FEATURES VDS =200V,ID =5A RDS(ON)
2024-12-09 21:52:33
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... to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =8A RDS(ON) < 20m Ω@ VGS...
2024-12-09 18:42:28
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... to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =8A RDS(ON) < 20m Ω@ VGS...
2024-12-09 21:52:33
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( Electronic Components ) New AP2602GY-HF integrated circuits Description AP2602 series are from Advanced Power innovated design and silicon process ...
2024-12-09 19:34:01
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( Electronic Components ) New AP2602GY-HF integrated circuits Description AP2602 series are from Advanced Power innovated design and silicon process ...
2024-12-09 21:52:33
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HXY4409 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 18:44:10
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HXY4407 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 18:44:10
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HXY4435 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 18:44:10
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HXY4441 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 18:44:10
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