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5N20DY 200V N-Channel Enhancement Mode MOSFET

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5N20DY 200V N-Channel Enhancement Mode MOSFET

Brand Name	Hua Xuan Yang
Model Number	5N20DY
Certification	RoHS、SGS
Place of Origin	ShenZhen China
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Product name	Mosfet Power Transistor
APPLICATION	Power Management
FEATURE	Excellent RDS(on)
Power mosfet transistor	Enhancement Mode Power MOSFET

Detailed Product Description

5N20D / Y 200V N-Channel Enhancement Mode MOSFET

DESCRIPTION

The AP50N20D uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other

FEATURES

VDS =200V,ID =5A

RDS(ON) <520mΩ @ VGS=4.5V

Application

Load switching

Hard switched and high frequency circuits Uninterruptible power supply

ORDERING INFORMATION

Product ID	Pack	Marking	Qty(PCS)
5N20D	TO-252	5N20D	3000
5N20Y	TO-251	5N20Y	4000

Note: Pin Assignment: G: Gate D: Drain S: Source

ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	VDS	200	V
Gate-Source Voltage	VGS	±20	V
Drain Current-Continuous	ID	5	A
Drain Current-Pulsed ^(Note ¹⁾	IDM	20	A
Maximum Power Dissipation	PD	30	W
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 To 150	℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

THERMAL DATA

Thermal Resistance,Junction-to-Ambient ^(Note ²⁾

RθJA

4.17

℃/W

ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Breakdown Voltage	BVDSS	V_GS=0V I_D=250μA	200	-	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=200V,VGS=0V	-	-	1	μA
Gate-Body Leakage Current	IGSS	VGS=±20V,VDS=0V	-	-	±100	nA
On Characteristics ^(Note ³⁾
Gate Threshold Voltage	VGS(th)	V_DS=V_GS,I_D=250μA	1.2	1.7	2.5	V
Drain-Source On-State Resistance	RDS(ON)	V_GS=10V, I_D=2A	-	520	580	mΩ
Forward Transconductance	gFS	V_DS=15V,I_D=2A	-	8	-	S
Dynamic Characteristics ^(Note4)
Input Capacitance	Clss	V_DS=25V,V_GS=0V, F=1.0MHz	-	580	-	PF
Output Capacitance	Coss		-	90	-	PF
Reverse Transfer Capacitance	Crss		-	3	-	PF
Switching Characteristics ^(Note ⁴⁾
Turn-on Delay Time	td(on)	V_DD=100V, R_L=15Ω V_GS=10V,R_G=2.5Ω	-	10	-	nS
Turn-on Rise Time	t_r		-	12	-	nS
Turn-Off Delay Time	td(off)		-	15	-	nS
Turn-Off Fall Time	t_f		-	15	-	nS
Total Gate Charge	Q_g	V_DS=100V,I_D=2A, V_GS=10V	-	12		nC
Gate-Source Charge	Qgs		-	2.5	-	nC
Gate-Drain Charge	Qgd		-	3.8	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^(Note ³⁾	VSD	V_GS=0V,I_S=2A	-	-	1.2	V
Diode Forward Current ^(Note ²⁾	I_S		-	-	5	A

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Essentially independent of operating temperature.

Product Tags: n channel mosfet transistor high voltage transistor

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