431 - 440 of 448
high power pnp transistor
Selling leads
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HXY4407 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 21:52:33
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HXY4409 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 21:52:33
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HXY4435 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 21:52:33
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HXY4441 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 21:52:33
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TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low ...
2024-12-09 18:42:28
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TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low ...
2024-12-09 21:52:33
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...FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High ...
2024-12-09 18:42:28
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...FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High ...
2024-12-09 18:42:28
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...FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High ...
2024-12-09 18:42:28
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...FEATURE Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High ...
2024-12-09 21:52:33
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