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high current transistor
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...Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 18:42:28
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...Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 21:52:33
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2N60-TC3 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better ...
2024-12-09 18:45:20
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2N60-TC3 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better ...
2024-12-09 18:45:20
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5N60 K-TCQ 5A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, ...
2024-12-09 18:45:20
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2N60-TC3 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better ...
2024-12-09 21:52:33
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2N60-TC3 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better ...
2024-12-09 21:52:33
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5N60 K-TCQ 5A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, ...
2024-12-09 21:52:33
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12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 18:42:28
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5N20D / Y 200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 18:45:20
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