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12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 21:52:33
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5N20D / Y 200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 21:52:33
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5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 18:42:28
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5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 21:52:33
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...Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High Current ...
2024-12-09 18:42:28
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...Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High Current Capability and ...
2024-12-09 18:42:28
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...Schottky Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High Current ...
2024-12-09 21:52:33
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...Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High Current Capability and ...
2024-12-09 21:52:33
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... Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High Current Capability and ...
2024-12-09 18:42:28
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... Barrier Chip Low Power Loss,High Efficiency Guard Ring Die Construction for Transient Protection High Surge Capability High Current Capability and ...
2024-12-09 18:42:28
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