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5N60 K-TCQ 5A 600V N-CHANNEL POWER MOSFET

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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Province/State:guangdong

Country/Region:china

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5N60 K-TCQ 5A 600V N-CHANNEL POWER MOSFET

Brand Name	Hua Xuan Yang
Model Number	5N60
Certification	RoHS、SGS
Place of Origin	ShenZhen China
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Product name	Mosfet Power Transistor
APPLICATION	Power Management
FEATURE	Excellent RDS(on)
Power mosfet transistor	Enhancement Mode Power MOSFET

Detailed Product Description

5N60 K-TCQ 5A 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

FEATURES

R_DS(ON) < 2.5Ω @ V_GS =10V, I_D = 2.5A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

Application

Load switching

Hard switched and high frequency circuits Uninterruptible power supply

ORDERING INFORMATION

Ordering Number		Package	Pin Assignment			Packing
Lead Free	Halogen Free		1	2	3
5N60KL-TA3-T	5N60KG-TA3-T	TO-220	G	D	S	Tube
5N60KL-TF1-T	5N60KG-TF1-T	TO-220F1	G	D	S	Tube
5N60KL-TN3-R	5N60KG-TN3-R	TO-252	G	D	S	Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	±30	V
Drain Current	Continuous	I_D	5.0	A
Drain Current	Pulsed (Note 2)	IDM	20	A
Avalanche Current (Note 2)		IAR	4.0	A
Avalanche Energy	Single Pulsed (Note 3)	EAS	80	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	3.25	V/ns
Power Dissipation	TO-220	P_D	106	W
	TO-220F1		36	W
	TO-252		50	W
Junction Temperature		T_J	+150	°C
Storage Temperature		TSTG	-55 ~ +150	°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

THERMAL DATA

PARAMETER		SYMBOL	RATING	UNIT
Junction to Ambient	TO-220F/TO-220F1	θJA	62.5	°C/W
Junction to Ambient	TO-252	θJA	110	°C/W
Junction to Case	TO-220	θJC	1.18	°C/W
	TO-220F1		3.47	°C/W
	TO-252		2.5	°C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage		BVDSS	V_GS=0V, I_D=250μA	600			V
Drain-Source Leakage Current		IDSS	V_DS=600V, V_GS=0V			1	μA
Gate-Source Leakage Current	Forward	IGSS	V_GS=30V, V_DS=0V			100	nA
	Reverse		V_GS=-30V, V_DS=0V			-100
ON CHARACTERISTICS
Gate Threshold Voltage		VGS(TH)	V_DS=V_GS, I_D=250μA	2.0		4.0	V
Static Drain-Source On-State Resistance		RDS(ON)	V_GS=10V, I_D=2.5A			2.5	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance		CISS	V_GS=0V, V _DS=25V, f=1.0MHz		480		pF
Output Capacitance		COSS			60		pF
Reverse Transfer Capacitance		CRSS			6.5		pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)		Q_G	V_DS=50V, I_D=1.3A, V_GS=10V I_G=100μA (Note 1, 2)		46		nC
Gate to Source Charge		QGS			4.6		nC
Gate to Drain Charge		QGD			6.0		nC
Turn-ON Delay Time (Note 1)		tD(ON)	V_DD=30V, V_GS=10V, I_D=0.5A, R_G=25Ω (Note 1, 2)		42		ns
Rise Time		t_R			44		ns
Turn-OFF Delay Time		tD(OFF)			120		ns
Fall-Time		t_F			38		ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current		I_S				5	A
Maximum Body-Diode Pulsed Current		ISM				20	A
Drain-Source Diode Forward Voltage (Note 1)		VSD	I_S=5.0A, V_GS=0V			1.4	V
Body Diode Reverse Recovery Time (Note 1)		trr	I_S=5.0A, V_GS=0V, dI_F/dt=100A/μs		390		nS
Body Diode Reverse Recovery Charge		Qrr			1.6		μC

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Essentially independent of operating temperature.

Product Tags: n channel mosfet transistor high voltage transistor

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