Shenzhen Hua Xuan Yang Electronics Co.,Ltd: Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price

Home > Products > Mosfet Power Transistor >

2N60 2A, 600VN-CHANNEL POWER MOSFET

Browse Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

2N60 2A, 600VN-CHANNEL POWER MOSFET

Brand Name	Hua Xuan Yang
Model Number	2N60
Certification	RoHS、SGS
Place of Origin	ShenZhen China
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Product name	Mosfet Power Transistor
APPLICATION	Power Management
FEATURE	Excellent RDS(on)
Power mosfet transistor	Enhancement Mode Power MOSFET
VDS	-100v

Detailed Product Description

2N60-TC3 Power MOSFET

2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

FEATURES

RDS(ON) < 7.0 Ω @ VGS = 10 V, ID = 1.0A

High Switching Speed

ORDERING INFORMATION

Ordering Number		Package	Pin Assignment			Packing
Lead Free	Halogen Free	Package	1	2	3	Packing
2N60L-TF1-T	2N60G-TF1-T	TO-220F1	G	D	S	Tube
2N60L-TF3-T	2N60G-TF3-T	TO-220F	G	D	S	Tube
2N60L-TM3-T	2N60G-TM3-T	TO-251	G	D	S	Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

QW-R205-461.A

n ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	± 30	V
Drain Current	Continuous	I_D	2	A
Drain Current	Pulsed (Note 2)	IDM	4	A
Avalanche Energy	Single Pulsed (Note 3)	EAS	84	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	4.5	V/ns
Power Dissipation	TO-220F/TO-220F1	P_D	23	W
Power Dissipation	TO-251	P_D	44	W
Junction Temperature		T_J	+150	°C
Storage Temperature		TSTG	-55 ~ +150	°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

n THERMAL DATA

PARAMETER		SYMBOL	RATINGS	UNIT
Junction to Ambient	TO-220F/TO-220F1	θJA	62.5	°C/W
Junction to Ambient	TO-251	θJA	100	°C/W
Junction to Case	TO-220F/TO-220F1	θJC	5.5	°C/W
Junction to Case	TO-251	θJC	2.87	°C/W

n ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage		BVDSS	V_GS=0V, I_D= 250μA	600			V
Drain-Source Leakage Current		IDSS	V_DS=600V, V_GS=0V			1	µA
Gate-Source Leakage Current	Forward	IGSS	V_GS=30V, V_DS=0V			100	nA
Gate-Source Leakage Current	Reverse	IGSS	V_GS=-30V, V_DS=0V			-100	nA
ON CHARACTERISTICS
Gate Threshold Voltage		VGS(TH)	V_DS=V_GS, I_D=250μA	2.0		4.0	V
Static Drain-Source On-State Resistance		RDS(ON)	V_GS=10V, I_D=1.0A			7.0	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance		CISS	V_GS=0V, V_DS=25V, f=1.0 MHz		190		pF
Output Capacitance		COSS			28		pF
Reverse Transfer Capacitance		CRSS			2		pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)		Q_G	V_DS=200V, V_GS=10V, I_D=2.0A I_G=1mA (Note 1, 2)		7		nC
Gateource Charge		QGS			2.9		nC
Gate-Drain Charge		QGD			1.9		nC
Turn-on Delay Time (Note 1)		tD(ON)	V_DS=300V, V_GS=10V, I_D=2.0A, R_G=25Ω (Note 1, 2)		4		ns
Rise Time		t_R			16		ns
Turn-off Delay Time		tD(OFF)			16		ns
Fall-Time		t_F			19		ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current		I_S				2	A
Maximum Body-Diode Pulsed Current		ISM				8	A
Drain-Source Diode Forward Voltage (Note 1)		VSD	V_GS=0V, I_S=2.0A			1.4	V
Reverse Recovery Time (Note 1)		trr	V_GS=0V, I_S=2.0A, dI_F/dt=100A/µs (Note1)		232		ns
Reverse Recovery Charge		Qrr	V_GS=0V, I_S=2.0A, dI_F/dt=100A/µs (Note1)		1.1		µC

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Essentially independent of operating temperature.

Product Tags: n channel mosfet transistor high voltage transistor

Related Products

AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator

LED Inductor 0.35W 2.5A Mosfet Power Transistor AP1332GEU-HF

Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

Email to this supplier


From:	Enter your Email please. Your email is incorrect!
To:	Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Subject:	Subject is empty!
Message:	Characters Remaining: (80/3000) Please enter 20 to 3000 characters to contact this supplier!