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4N60 -R 4A, 600V N-CHANNEL POWER MOSFET

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Province/State:guangdong

Country/Region:china

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4N60 -R 4A, 600V N-CHANNEL POWER MOSFET

Brand Name	Hua Xuan Yang
Model Number	4N60
Certification	RoHS、SGS
Place of Origin	ShenZhen China
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Product name	Mosfet Power Transistor
APPLICATION	Power Management
FEATURE	Excellent RDS(on)
Power mosfet transistor	Enhancement Mode Power MOSFET

Detailed Product Description

2N60-TC3 Power MOSFET

2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

FEATURES

* R_DS(ON) < 2.5Ω @V_GS = 10 V

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness

ORDERING INFORMATION

Ordering Number		Package	Pin Assignment			Packing
Lead Free	Halogen Free	Package	1	2	3	Packing
4N60L-TF1-T	4N60G-TF1-T	TO-220F1	G	D	S	Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

n ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	±30	V
Avalanche Current (Note 2)		IAR	4	A
Drain Current	Continuous	I_D	4.0	A
	Pulsed (Note 2)	IDM	16	A
Avalanche Energy	Single Pulsed (Note 3)	EAS	160	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	4.5	V/ns
Power Dissipation		P_D	36	W
Junction Temperature		T_J	+150	°С
Operating Temperature		TOPR	-55 ~ +150	°С
Storage Temperature		TSTG	-55 ~ +150	°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

THERMAL DATA

PARAMETER	SYMBOL	RATINGS	UNIT
Junction to Ambient	θJA	62.5	°С/W
Junction to Case	θJc	3.47	°С/W

ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage		BVDSS	V_GS=0V, I_D=250μA	600			V
Drain-Source Leakage Current		IDSS	V_DS=600V, V_GS=0V			10	μA
			V_DS=480V, T_C=125°С			100	µA
Gate-Source Leakage Current	Forward	IGSS	V_GS=30V, V_DS=0V			100	nA
	Reverse		V_GS=-30V, V_DS=0V			-100	nA
Breakdown Voltage Temperature Coefficient		△BV_DSS/△T_J	I_D=250μA,Referenced to 25°C		0.6		V/°С
ON CHARACTERISTICS
Gate Threshold Voltage		VGS(TH)	V_DS=V_GS, I_D=250μA	3.0		5.0	V
Static Drain-Source On-State Resistance		RDS(ON)	V_GS=10 V, I_D=2.2A		2.3	2.5	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance		CISS	V_DS =25V, V_GS=0V, f =1MHz		440	670	pF
Output Capacitance		COSS			50	100	pF
Reverse Transfer Capacitance		CRSS			6.8	20	pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time		tD(ON)	V_DD=30V, I_D=0.5A, R_G=25Ω (Note 1, 2)		45	60	ns
Turn-On Rise Time		t_R			35	55	ns
Turn-Off Delay Time		tD(OFF)			65	85	ns
Turn-Off Fall Time		t_F			40	60	ns
Total Gate Charge		Q_G	V_DS=50V, I_D=1.3A, I_D=100μA V_GS=10V (Note 1, 2)		15	30	nC
Gate-Source Charge		QGS			5		nC
Gate-Drain Charge		QGD			15		nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage		VSD	V_GS=0V, I_S=4.4A			1.4	V
Maximum Continuous Drain-Source Diode Forward Current		I_S				4.4	A
Maximum Pulsed Drain-Source Diode Forward Current		ISM				17.6	A
Reverse Recovery Time		trr	V_GS=0 V, I_S=4.4A, dI_F/dt=100 A/μs (Note 1)		250		ns
Reverse Recovery Charge		QRR			1.5		μC

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Essentially independent of operating temperature.

Product Tags: n channel mosfet transistor high voltage transistor

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