China Sic Heating Elements manufacturer
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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gaas based epi wafer

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gaas based epi wafer

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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF ... 2024-12-09 13:28:02
GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF ... 2024-12-09 19:40:24
InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF ... 2024-12-09 13:28:02
InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF ... 2024-12-09 19:40:24
...GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell We provides both single crystal and polycrystalline GaAs wafer ... 2024-12-09 13:28:02
...GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell We provides both single crystal and polycrystalline GaAs wafer ... 2024-12-09 19:40:24
... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more ... 2025-04-23 07:32:19
...wafer ( Gallium Antimonide ) We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a ... 2024-12-09 13:28:02
... cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have ... 2024-12-09 13:28:02
... cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have ... 2024-12-09 19:40:24
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