China Sic Heating Elements manufacturer
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Brand Name ZG
Model Number MS
Certification CE
Place of Origin CHINA
Minimum Order Quantity 1 piece
Price USD10/piece
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 10000 pieces per month
Delivery Time 3 working days
Packaging Details Strong wooden box for Global shipping
Application making LD , LED , microwave circuit and solar cell applications
Diameter Ø 2" / Ø 3" / Ø 4"
Thickness 350 um ~ 625 um
Grade Epi polished grade / mechanical grade
Detailed Product Description

Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell

 

We provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) to opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , in diameter range from 2" to 4 ". We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical propertirs and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafers , both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications , please contact us for more product information .

 

 

GaAs Wafer Feature and Application

 

FeatureApplication field
High electron mobilityLight emitting diodes
High frequencyLaser diodes
High conversion efficiencyPhotovoltaic devices
Low power consumptionHigh Electron Mobility Transistor
Direct band gapHeterojunction Bipolar Transistor

 

Product Specification

 
GrowthLEC / VGF
DiameterØ 2" / Ø 3" / Ø 4"
Thickness350 um ~ 625 um
Orientation<100> / <111> / <110> or others
ConductivityP - type / N - type / Semi-insulating
DopantZn / Si / undoped
SurfaceOne side polished or two sides polished
Concentration1E17 ~ 5E19 cm-3
TTV<= 10 um
Bow / Warp<= 20 um
GradeEpi polished grade / mechanical grade

 

Product Tags: Polycrystalline GaAs Wafer   Single Crystal Gallium Arsenide   Gallium Arsenide For LD LED  
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