Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide )
for making LD , LED , microwave circuit, solar cell
We provides both single crystal and polycrystalline GaAs wafer (
Gallium Arsenide ) to opto-electronics and micro-electronics
industry for making LD , LED , microwave circuit and solar cell
applications , in diameter range from 2" to 4 ". We offer single
crystal GaAs wafer produced by two main growth techniques LEC and
VGF method , allowing us to provide customers the widest choice of
GaAs material with high uniformity of electrical propertirs and
excellent surface quality . Gallium Arsenide can be supplied as
ingots and polished wafers , both conducting and semi-insulating
GaAs wafer , mechanical grade and epi ready grade are all available
. We can offer GaAs wafer with low EPD value and high surface
quality suitable for your MOCVD and MBE applications , please
contact us for more product information .
GaAs Wafer Feature and Application
Feature | Application field |
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High electron mobility | Light emitting diodes |
High frequency | Laser diodes |
High conversion efficiency | Photovoltaic devices |
Low power consumption | High Electron Mobility Transistor |
Direct band gap | Heterojunction Bipolar Transistor |
Product Specification
Growth | LEC / VGF |
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Diameter | Ø 2" / Ø 3" / Ø 4" |
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Thickness | 350 um ~ 625 um |
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Orientation | <100> / <111> / <110> or others |
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Conductivity | P - type / N - type / Semi-insulating |
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Dopant | Zn / Si / undoped |
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Surface | One side polished or two sides polished |
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Concentration | 1E17 ~ 5E19 cm-3 |
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TTV | <= 10 um |
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Bow / Warp | <= 20 um |
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Grade | Epi polished grade / mechanical grade |
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