Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer
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InP Based Epi Wafer
We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your InP epi layer structure . Please contact us for more product information or discuss your epi layer structure . InP Based Epi Wafer CapabilityOur reactors are configured for a variety of material systems and
process conditions. We can provide custom epitaxy for a variety of
device applications ranging from LEDs to HEMTs.
Optoelectronic applications: Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides
Electronic applications: FETs, HBTs, HEMTs, diodes, Microwave devices.
Epi Layer Structure ( HEMT / HBT )
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| Product Tags: 4 Inch Technical Ceramic Parts InP Based Epi Wafer 3 Inch Epi Wafer |
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