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tps5430 switching power supply chip
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Power Schottky rectifier B5817WS SJ SOD-323 20V 1A Fast Recovery -65°C ~ 125°C Description: These schottky barrier diodes are designed for high speed ...
2024-12-09 22:37:59
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IRFPE50 Transistor Electronics Components electronic Power MOSFET Features • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central ...
2024-12-09 22:38:38
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BCP54 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector ...
2024-12-09 22:38:51
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PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring ...
2024-12-09 22:38:51
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SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − ...
2024-12-09 22:38:51
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NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-channel enhancement mode power field ...
2024-12-09 22:41:27
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TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 NPN Epitaxial DarliCM GROUPon Transistor Absolute Maximum ...
2024-12-09 22:41:27
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High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16 DESCRIPTION Available either in through-hole or surface-mount packages, the ...
2024-12-09 22:41:27
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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate Features ·With TO-220AB package ·Glass passivated, sensitive gate ...
2024-12-09 22:41:27
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FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ....
2024-12-09 22:41:27
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