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PZT2222A Power Mosfet Transistor NPN GENERAL PURPOSE AMPLIFIER

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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PZT2222A Power Mosfet Transistor NPN GENERAL PURPOSE AMPLIFIER

Model Number PZT2222A
Certification new & original
Place of Origin original factory
Minimum Order Quantity 50pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 1 W Surface Mount SOT-223
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 0.6 A
Total Device Dissipation 1 W
Junction Temperature +150 °C
Detailed Product Description

 

PZT2222A NPN SILICON TRANSISTOR

NPN GENERAL PURPOSE AMPLIFIER

 

FEATURES

* This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

 

 

 

ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETERSYMBOLRATINGSUNIT
Collector-Base VoltageVCBO75V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector CurrentIC0.6A
Total Device DissipationPC1W
Junction TemperatureTJ+150°C
Storage TemperatureTSTG-55 ~ +150°C

Note:

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

 

 

 

 

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Product Tags: multi emitter transistor   silicon power transistors  
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