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BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors

Model Number BCP54
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor NPN 45 V 1.5 A 1.5 W Surface Mount SOT-223-4
Collector-Emitter Voltage 45 V
Collector-Base Voltage 45 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature -55 to +150 °C
Total Device Dissipation 1.5 W
Detailed Product Description

 

BCP54 NPN General Purpose Amplifier

 

 

 

This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38.

 

 

 

 

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

SymbolParameterValueUnits
VCEOCollector-Emitter Voltage45V
VCBOCollector-Base Voltage45V
VEBOEmitter-Base Voltage5.0V
ICCollector Current - Continuous1.5A
TJ, TstgOperating and Storage Junction Temperature Range-55 to +150°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

 

 

 

 

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Product Tags: multi emitter transistor   silicon power transistors  
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