TIP120 Power Mosfet Transistor Complementary Silicon Transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	TIP120
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	8600pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor NPN - DarliCM GROUPon 60 V 5 A 2 W Through Hole TO-220
Collector-Base Voltage	60 V
Collector-Emitter Voltage	60 V
Emitter-Base Voltage	5 V
Collector Current (DC)	5 A
Collector Current (Pulse)	8 A
Base Current (DC)	120 mA

Detailed Product Description

TIP120/121/122

Medium Power Linear Switching Applications

• Complementary to TIP125/126/127

NPN Epitaxial DarliCM GROUPon Transistor

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Symbol	Parameter	Value	Units
V_CBO	Collector-Base Voltage : TIP120 : TIP121 : TIP122	60 80 100	V V V
V_CEO	Collector-Emitter Voltage : TIP120 : TIP121 : TIP122	60 80 100	V V V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current (DC)	5	A
I_CP	Collector Current (Pulse)	8	A
I_B	Base Current (DC)	120	mA
P_C	Collector Dissipation (Ta=25°C)	2	W
P_C	Collector Dissipation (T_C=25°C)	65	W
T_J	Junction Temperature	150	°C
T_STG	Storage Temperature	- 65 ~ 150	°C

Typical characteristics

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Product Tags: multi emitter transistor silicon power transistors

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