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to3pl npn power amplifier
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Features ► Integrated half-bridge package ► Reduces the part count by half ► Facilitates better PCB layout ► Key parameters optimized for Class-D ...
2024-12-09 22:38:38
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PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. ...
2024-12-09 22:38:51
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MJD122G Complementary DarliCM GROUPon Power Transistor switching power mosfet low power mosfet Designed for general purpose amplifier and low speed ...
2024-12-09 22:41:27
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Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038 Plastic DarliCM GROUPon complementary silicon power transistors ...
2024-12-09 22:38:38
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...POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed ...
2024-12-09 22:41:27
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Features • Low current (max. 100 mA). • Low voltage (max. 65 V). Absolute Maximum Ratings Ta = 25°C Parameter Symbol BC846 BC847 BC848 Unit Collector...
2024-12-09 22:38:38
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General purpose (dual digital transistors) EMD3 / UMD3N / IMD3A Features 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) ...
2024-12-09 22:38:51
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PMBT3906 PNP switching transistor General description PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic ...
2024-12-09 22:41:27
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ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG (Manufactured by Toshiba Malaysia) The ULN2803APG / AFWG Series are high−voltage, high−current darliCM ...
2024-12-09 22:41:27
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... A Continuous from –40°C to 85°C – 0°C to 125°C Temperature Coefficient: 10 ppm/°C High Accuracy: – Gain Error (Shunt and Amplifier): 0.3% (Max) – ...
2024-12-09 22:37:32
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