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Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

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Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

Model Number 2N6038
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000
Delivery Time 1 day
Packaging Details please contact me for details
Description Bipolar (BJT) Transistor NPN - DarliCM GROUPon 60 V 4 A 40 W Through Hole TO-126
Material Plastic Package
Collector−Base Voltage 60
ESD Ratings Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in
Detailed Product Description

Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

 

Plastic DarliCM GROUPon complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

 

• High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mAdc

                                             VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc

                                              (Min) — 2N6036, 2N6039

• Forward Biased Second Breakdown Current Capability  IS/b = 1.5 Adc @ 25 Vdc

• Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication

• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package

 

MAXIMUM RATINGS

RatingSymbolValueUnit

Collector−Emitter Voltage 2N6034

                                         2N6035, 2N6038

                                         2N6036, 2N6039

  VCEO

  40

  60

  80

  Vdc

Collector−Base Voltage 2N6034

                                      2N6035, 2N6038

                                      2N6036, 2N6039

  VCBO

  40

  60

  80

  Vdc
Emitter−Base Voltage  VEBO  5.0  Vdc

Collector Current           Continuous

                                       Peak

  IC

  4.0

  8.0

  Adc

  Apk

Base Current  IB  100  mAdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

  PD

  40

  320

    W

  mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

  PD

  1.5

  12

    W

  mW/°C

Operating and Storage Junction Temperature Range  TJ, Tstg  –65 to +150  °C

 

THERMAL CHARACTERISTICS

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction−to−CaseRJC3.12°C/W
Thermal Resistance, Junction−to−AmbientRJA83.3°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

 

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS    

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)                 2N6034                                                                                      2N6035, 2N6038                                                                        2N6036, 2N6039

  VCEO(sus)

  40

  60

  80

  --

  --

  --

  Vdc

Collector−Cutoff Current

(VCE = 40 Vdc, IB = 0)                   2N6034

(VCE = 60 Vdc, IB = 0)                   2N6035, 2N6038

(VCE = 80 Vdc, IB = 0)                   2N6036, 2N6039

  ICEO

  --

  -- 

  --

  100

  100

  100

  uA

Collector−Cutoff Current

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)       2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)       2N6035, 2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)       2N6036, 2N6039

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C)  2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C)  2N6035,                                                                                    2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C)  2N6036,                                                                                    2N6039 

  ICEX

  --

  -- 

  --

  --

  --

  --

  100

  100

  100

  500

  500

  500

  uA

Collector−Cutoff Current

(VCB = 40 Vdc, IE = 0)                     2N6034

(VCB = 60 Vdc, IE = 0)                     2N6035, 2N6038

(VCB = 80 Vdc, IE = 0)                     2N6036, 2N6039

  ICBO

  --

  --

  --

  0.5

  0.5

  0.5

  mAdc
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)  IEBO  --  2.0  mAdc
ON CHARACTERISTICS    

DC Current Gain

     (IC = 0.5 Adc, VCE = 3.0 Vdc)

     (IC = 2.0 Adc, VCE = 3.0 Vdc)

     (IC = 4.0 Adc, VCE = 3.0 Vdc)

  hFE

  500

  750

  100

   --

  15,000

   --

  --

Collector−Emitter Saturation Voltage

     (IC = 2.0 Adc, IB = 8.0 mAdc)

     (IC = 4.0 Adc, IB = 40 mAdc)

  VCE(sat)

  --

  --

  2.0

  3.0

  Vdc

Base−Emitter Saturation Voltage

     (IC = 4.0 Adc, IB = 40 mAdc)

  VBE(sat)  --  4.0  Vdc

Base−Emitter On Voltage

     (IC = 2.0 Adc, VCE = 3.0 Vdc)

  VBE(on)  --  2.8  Vdc
DYNAMIC CHARACTERISTICS    

Small−Signal Current−Gain

     (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

  |hfe|  25  --  --

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)  2N6034, 2N6035, 2N6036                                                          2N6038, 2N6039

  Cob

  --

  --

  200

  100

  pF

*Indicates JEDEC Registered Data.

 

 

 

 

 

 

 

 

 

Product Tags: npn smd transistor   multi emitter transistor  
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