Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

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Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

Model Number	2N6038
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	10000
Delivery Time	1 day
Packaging Details	please contact me for details
Description	Bipolar (BJT) Transistor NPN - DarliCM GROUPon 60 V 4 A 40 W Through Hole TO-126
Material	Plastic Package
Collector−Base Voltage	60
ESD Ratings	Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V
Epoxy Meets	UL 94 V−0 @ 0.125 in

Detailed Product Description

Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038

Plastic DarliCM GROUPon complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

• High DC Current Gain — ^hFE = 2000 (Typ) @ IC = 2.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mAdc

V_CEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc

(Min) — 2N6036, 2N6039

• Forward Biased Second Breakdown Current Capability I_S/b = 1.5 Adc @ 25 Vdc

• Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication

• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package

**MAXIMUM RATINGS**
Rating	Symbol	Value	Unit
Collector−Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039	V_CEO	40 60 80	Vdc
Collector−Base Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039	V_CBO	40 60 80	Vdc
Emitter−Base Voltage	V_EBO	5.0	Vdc
Collector Current Continuous Peak	I_C	4.0 8.0	Adc Apk
Base Current	I_B	100	mAdc
Total Device Dissipation @ TC = 25°C Derate above 25°C	P_D	40 320	W mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	P_D	1.5 12	W mW/°C
Operating and Storage Junction Temperature Range	T_J, T_stg	–65 to +150	°C

**THERMAL CHARACTERISTICS**
Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction−to−Case	R_JC	3.12	°C/W
Thermal Resistance, Junction−to−Ambient	R_JA	83.3	°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

**ELECTRICAL CHARACTERISTICS** (TC = 25C unless otherwise noted)
Characteristic	Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) 2N6034 2N6035, 2N6038 2N6036, 2N6039	V_CEO(sus)	40 60 80	-- -- --	Vdc
Collector−Cutoff Current (VCE = 40 Vdc, IB = 0) 2N6034 (VCE = 60 Vdc, IB = 0) 2N6035, 2N6038 (VCE = 80 Vdc, IB = 0) 2N6036, 2N6039	I_CEO	-- -- --	100 100 100	uA
Collector−Cutoff Current (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035, 2N6038 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036, 2N6039 (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6034 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6035, 2N6038 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6036, 2N6039	I_CEX	-- -- -- -- -- --	100 100 100 500 500 500	uA
Collector−Cutoff Current (VCB = 40 Vdc, IE = 0) 2N6034 (VCB = 60 Vdc, IE = 0) 2N6035, 2N6038 (VCB = 80 Vdc, IE = 0) 2N6036, 2N6039	I_CBO	-- -- --	0.5 0.5 0.5	mAdc
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)	I_EBO	--	2.0	mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc)	^hFE	500 750 100	-- 15,000 --	--
Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc)	V_CE(sat)	-- --	2.0 3.0	Vdc
Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc)	V_BE(sat)	--	4.0	Vdc
Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc)	V_BE(on)	--	2.8	Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current−Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)	\|h_fe\|	25	--	--
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036 2N6038, 2N6039	C_ob	-- --	200 100	pF

*Indicates JEDEC Registered Data.

Product Tags: npn smd transistor multi emitter transistor

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