Plastic DarliCM GROUPon complementary power mosfet , Silicon Power
Transistors 2N6038 Plastic DarliCM GROUPon complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc
(Min) — 2N6036, 2N6039 • Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc • Monolithic Construction with Built–In Base–Emitter Resistors to
LimitELeakage Multiplication • Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic
Package MAXIMUM RATINGS | Rating | Symbol | Value | Unit | Collector−Emitter Voltage 2N6034
2N6035, 2N6038
2N6036, 2N6039 | VCEO | 40 60 80 | Vdc | Collector−Base Voltage 2N6034
2N6035, 2N6038
2N6036, 2N6039 | VCBO | 40 60 80 | Vdc | | Emitter−Base Voltage | VEBO | 5.0 | Vdc | Collector Current Continuous
Peak | IC | 4.0 8.0 | Adc Apk | | Base Current | IB | 100 | mAdc | Total Device Dissipation @ TC = 25°C Derate above 25°C | PD | 40 320 | W mW/°C | Total Device Dissipation @ TC = 25°C Derate above 25°C | PD | 1.5 12 | W mW/°C | | Operating and Storage Junction Temperature Range | TJ, Tstg | –65 to +150 | °C |
THERMAL CHARACTERISTICS | Characteristic | Symbol | Max | Unit | | Thermal Resistance, Junction−to−Case | RJC | 3.12 | °C/W | | Thermal Resistance, Junction−to−Ambient | RJA | 83.3 | °C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure
to stresses above the Recommended Operating Conditions may affect
device reliability. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) | Characteristic | Symbol | Min | Max | Unit | | OFF CHARACTERISTICS | | | | | Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
2N6034
2N6035, 2N6038
2N6036, 2N6039 | VCEO(sus) | 40 60 80 | -- -- -- | Vdc | Collector−Cutoff Current (VCE = 40 Vdc, IB = 0)
2N6034 (VCE = 60 Vdc, IB = 0)
2N6035, 2N6038 (VCE = 80 Vdc, IB = 0)
2N6036, 2N6039 | ICEO | -- -- -- | 100 100 100 | uA | Collector−Cutoff Current (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035,
2N6038 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036,
2N6039 (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6034 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6035,
2N6038 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6036,
2N6039 | ICEX | -- -- -- -- -- -- | 100 100 100 500 500 500 | uA | Collector−Cutoff Current (VCB = 40 Vdc, IE = 0)
2N6034 (VCB = 60 Vdc, IE = 0)
2N6035, 2N6038 (VCB = 80 Vdc, IE = 0)
2N6036, 2N6039 | ICBO | -- -- -- | 0.5 0.5 0.5 | mAdc | | Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0) | IEBO | -- | 2.0 | mAdc | | ON CHARACTERISTICS | | | | | DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) | hFE | 500 750 100 | -- 15,000 -- | -- | Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) | VCE(sat) | -- -- | 2.0 3.0 | Vdc | Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) | VBE(sat) | -- | 4.0 | Vdc | Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) | VBE(on) | -- | 2.8 | Vdc | | DYNAMIC CHARACTERISTICS | | | | | Small−Signal Current−Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) | |hfe| | 25 | -- | -- | Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036
2N6038, 2N6039 | Cob | -- -- | 200 100 | pF |
*Indicates JEDEC Registered Data. |
