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PMBT3906 Power Mosfet Transistor PNP switching transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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PMBT3906 Power Mosfet Transistor PNP switching transistor

Model Number PMBT3906
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 7900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 350mW Surface Mount 6-TSSOP
collector-base voltage −40 V
collector-emitter voltage −40 V
emitter-base voltage −6 V
collector current −200 mA
peak collector current −200 mA
storage temperature −65 to +150 °C
Detailed Product Description

 

PMBT3906 PNP switching transistor

 

General description

PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PMBT3904.

 

Features and benefits „

Collector-emitter voltage VCEO = −40 V „

Collector current capability IC = −200 mA

 

Applications „

General amplification and switching

 

Quick reference data

SymbolParameterConditionsMinTypMaxUnit
VCEOcollector-emitter voltageopen base--−40V
ICcollector current --−200V

 

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

SymbolParameterConditionsMinMaxUnit
VCBOcollector-base voltageopen emitter-−40V
VCEOcollector-emitter voltageopen base-−40V
VEBOemitter-base voltageopen collector-−6V
ICcollector current --200mA
ICMpeak collector current --200mA
IBMpeak base current --100mA
Ptottotal power dissipationTamb ≤ 25 °C [1]-250mW
Tjjunction temperature -150°C
Tambambient temperature -65+150°C
Tstgstorage temperature -65+150°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

 

Package outline SOT23 (TO-236AB)

 

 

 

 

 

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Product Tags: multi emitter transistor   silicon power transistors  
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