PZT2907A Power Mosfet Transistor Si-Epitaxial Planar Switching Transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	PZT2907A
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	50pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	10000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 1 W Surface Mount SOT-223
Collector-Emitter Voltage	60 V
Collector-Base Voltage	60 V
Emitter-Base Voltage	5.0 V
Collector Current - Continuous	800 mA
Operating and Storage Junction Temperature	-55 to +150 °C
Packaging	Reel (SOT-223)

Detailed Product Description

PNP General Purpose Amplifier

This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.

Absolute Maximum Ratings* T_A = 25°C unless otherwise noted

Symbol	Parameter	Value	Unit
V_CEO	Collector-Emitter Voltage	60	V
V_CBO	Collector-Base Voltage	60	V
V_EBO	Emitter-Base Voltage	5.0	V
I_C	Collector Current - Continuous	800	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

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Product Tags: power mosfet ic silicon power transistors

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