5831 - 5840 of 6293
stm32f407igt6 ic electronic components
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AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide ...
2024-12-09 22:38:51
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2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier ...
2024-12-09 22:38:51
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NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and ...
2024-12-09 22:38:51
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AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS...
2024-12-09 22:38:51
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BUK95/9608-55A TrenchMOS™ logic level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ ...
2024-12-09 22:38:51
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HUF75645P3, HUF75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • ...
2024-12-09 22:38:51
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MJD340TF High Voltage Power Transistors D-PAK switching power mosfet High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed ...
2024-12-09 22:38:51
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IRF1010EPbF HEXFET® Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast ...
2024-12-09 22:38:51
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PDP SWITCH IRFB4229PbF Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications ...
2024-12-09 22:38:51
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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel ...
2024-12-09 22:38:51
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