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AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor

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AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor

Model Number AO4620
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Mosfet Array 30V 2W Surface Mount 8-SOIC
Drain-Source Voltage 30 / -30 V
Gate-Source Voltage ±20 V
Pulsed Drain Current 30 / -30 A
Avalanche Current 13 / 17 A
Repetitive avalanche energy 0.3mH 25 / 43 mJ
Junction and Storage Temperature -55 to 150°C
Detailed Product Description

 

AO4620 Complementary Enhancement Mode Field Effect Transistor

 

General Description

The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard Product AO4620 is Pb-free (meets ROHS & Sony 259 specifications).

 

Features

   n-channel                             p-channel

VDS (V) = 30V                            -30V

ID = 7.2A (VGS=10V)                  -5.3A (VGS = -10V)

RDS(ON)                                    RDS(ON)

< 24mΩ (VGS=10V)                  < 38mΩ (VGS = -10V)

< 36mΩ (VGS=4.5V)                 < 60mΩ (VGS = -4.5V)

 

 

 

Absolute Maximum Ratings TA=25°C unless otherwise noted

ParameterSymbolMax n-channelMax p-channelUnits
Drain-Source VoltageVDS30-30V
Gate-Source VoltageVGS±20±20V
Continuous Drain Current FTA=25°CID7.2-5.3A
TA=70°C6.2-4.5A
Pulsed Drain Current BIDM30-30A
Power Dissipation FTA=25°CPD22W
TA=70°C1.441.44W
Avalanche Current BIAR1317A
Repetitive avalanche energy 0.3mH BEAR2543mJ
Junction and Storage Temperature RangeTJ, TSTG-55 to 150-55 to 150°C

B: Repetitive rating, pulse width limited by junction temperature.

F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.

 

 

 

 

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Product Tags: multi emitter transistor   silicon power transistors  
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