AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor
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AO4620 Complementary Enhancement Mode Field Effect Transistor
General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard Product AO4620 is Pb-free (meets ROHS & Sony 259 specifications).
Features n-channel p-channel VDS (V) = 30V -30V ID = 7.2A (VGS=10V) -5.3A (VGS = -10V) RDS(ON) RDS(ON) < 24mΩ (VGS=10V) < 38mΩ (VGS = -10V) < 36mΩ (VGS=4.5V) < 60mΩ (VGS = -4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
B: Repetitive rating, pulse width limited by junction temperature. F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.
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