2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	2N2222A
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	100pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	20000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor NPN 40 V 800 mA 300MHz 500 mW Through Hole TO-18
collector-base voltage	75 V
collector-emitter voltage	40 V
emitter-base voltage	6 V
collector current (DC)	800 mA
peak collector current	800 mA
operating ambient temperature	−65 to +150 °C

Detailed Product Description

NPN switching transistors 2N2222; 2N2222A

FEATURES

• High current (max. 800 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• Linear amplification and switching.

DESCRIPTION

NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.

PINNING

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
_VCBO	collector-base voltage 2N2222 2N2222A	open emitter	- -	60 75	V V
V_CEO	collector-emitter voltage 2N2222 2N2222A	open base	- -	30 40	V V
V_EBO	emitter-base voltage 2N2222 2N2222A	open collector	- -	5 6	V V
I_C	collector current (DC)		-	800	mA
I_CM	peak collector current		-	800	mA
I_BM	peak base current		-	200	mA
P_tot	total power dissipation	T_amb ≤ 25 °C	-	500	mW
P_tot	total power dissipation	T_case ≤ 25 °C	-	1.2	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	200	°C
T_amb	operating ambient temperature		-65	+150	°C

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Product Tags: multi emitter transistor silicon power transistors

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