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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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silicon npn power transistors

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2N6052 PNP DARLICM GROUPON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360 . . . designed for general−purpose amplifier and low ... 2024-12-09 22:41:27
ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG (Manufactured by Toshiba Malaysia) The ULN2803APG / AFWG Series are high−voltage, high−current darliCM ... 2024-12-09 22:41:27
Thyristors BT151 series GENERAL DESCRIPTION Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high ... 2024-12-09 22:38:51
... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ... 2024-12-09 22:38:51
...Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling ... 2024-12-09 22:38:51
... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ... 2024-12-09 22:38:51
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... 2024-12-09 22:41:27
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power ... 2024-12-09 22:37:47
...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ... 2024-12-09 22:37:59
...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ... 2024-12-09 22:41:27
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