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silicon npn power transistors
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2N6052 PNP DARLICM GROUPON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360 . . . designed for general−purpose amplifier and low ...
2024-12-09 22:41:27
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ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG (Manufactured by Toshiba Malaysia) The ULN2803APG / AFWG Series are high−voltage, high−current darliCM ...
2024-12-09 22:41:27
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Thyristors BT151 series GENERAL DESCRIPTION Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high ...
2024-12-09 22:38:51
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... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ...
2024-12-09 22:38:51
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...Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling ...
2024-12-09 22:38:51
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... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ...
2024-12-09 22:38:51
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... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ...
2024-12-09 22:41:27
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...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power ...
2024-12-09 22:37:47
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...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ...
2024-12-09 22:37:59
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...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ...
2024-12-09 22:41:27
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