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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching
Model Number IRLL024NTRPBF
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description MOSFET N-CH 55V 3.1A SOT223
Pulsed Drain Current 12 A
Linear Derating Factor 8.3 mW/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 120 mJ
Avalanche Current 3.1 A
Junction and Storage Temperature -55 to + 150 °C
Detailed Product Description

 

IRLL024NPbF HEXFET® Power MOSFET

 

  • Surface Mount
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free

 

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

 

Absolute Maximum Ratings

 ParameterMax.Units
ID @ TA = 25°CContinuous Drain Current, VGS @ 10V**4.4A
ID @ TA = 25°CContinuous Drain Current, VGS @ 10V*3.1A
ID @ TA = 70°CContinuous Drain Current, VGS @ 10V*2.5A
IDMPulsed Drain Current12A
PD @TA = 25°CPower Dissipation (PCB Mount)**2.1W
PD @TA = 25°CPower Dissipation (PCB Mount)*1.0W
 Linear Derating Factor (PCB Mount)*8.3mW/°C
VGSGate-to-Source Voltage± 16V
EASSingle Pulse Avalanche Energy120mJ
IARAvalanche Current3.1A
EARRepetitive Avalanche Energy*0.1mJ
dv/dtPeak Diode Recovery dv/dt5.0V/ns
TJ, TSTGJunction and Storage Temperature Range-55 to + 150°C

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

 

 

 

 

 

 

Stock Offer (Hot Sell)

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SS443A28632HONEYWELL16+TO-92
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SS461C6348HONEYWELL16+TO-92
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TP0606N3-G11068MICROCHIP16+TO-92
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TL1431IZ17276ST10+TO-92
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PXT2222A1567416+TO-89
STRX67572324SANKEN16+TO3P-7
STRX67691421SANKEN16+TO3P-7
STR3013013928SK16+TO3P-5
STD03P/STD03N1000SANKEN14+TO-3P-4
SSH22N50A12510FSC13+TO-3P
TIP35C18012KEC16+TO-3P
S30D45C2940MOSPEC16+TO-3P
SSH40N2017268SEC16+TO-3P
SGL160N60UFD1439FAIRCHILD14+TO-264
SPX29152T5-L7756EXAR06+TO-263-5
SP1086V1-L-3-3/TR7516SIPEX/EXA10+TO-263-3L
LT1963E#PBF1652LINEAR15+TO-263/5
14CL4024324FAIRCHILD14+TO-263

 

 

 

 
Product Tags: multi emitter transistor   silicon power transistors  
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