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2N6052 PNP DARLICM GROUPON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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2N6052 PNP DARLICM GROUPON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360

Brand Name ONSEMI
Model Number 2N6052
Certification Original Factory Pack
Place of Origin Original
Minimum Order Quantity 50pcs
Price negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 5200PCS
Delivery Time 1 day
Packaging Details please contact me for details
Description Bipolar (BJT) Transistor
VCEO 100 Vdc
VCBO 100 Vdc
VEBO 5.0 Vdc
IB 0.2 Adc
IC 12 Adc
Detailed Product Description

2N6052 PNP DARLICM GROUPON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360

 

. . . designed for general−purpose amplifier and low frequency switching applications

• High DC Current Gain —

              hFE = 3500 (Typ) @ IC = 5.0 Adc

• Collector−Emitter Sustaining Voltage — @ 100 mA

                       VCEO(sus) = 80 Vdc (Min) — 2N6058

                                            100 Vdc (Min) — 2N6052, 2N6059

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

 

 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate

 

The data of Figures 5, 6, and 7 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C; TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

 

 

 

 

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