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silicon npn power transistors
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HGTG11N120CND NPT Series N Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT ...
2024-12-09 22:59:53
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...GENERAL PURPOSE SWITCHING TRANSISTOR Voltage -150Volts Power 300mWatts MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, ...
2024-12-09 22:37:32
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... Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K APPLICATION...
2024-12-09 22:48:58
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... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced ...
2024-12-09 22:41:27
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2SK1582(G15) Power Mosfet Transistor Electronics Components Chip IC Electronics Silicon P Channel MOS FET Description Low frequency power amplifier ...
2024-12-09 22:41:27
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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , DarliCM GROUPon 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) ...
2024-12-09 22:38:38
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BC858B SURFACE MOUNT PNP SILICON TRANSISTOR electrical circuit board , programmable ic DESCRIPTION The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 ...
2024-12-09 22:41:39
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...Power MOSFET Transistor general purpose mosfet ►Advanced Process ►Technology Ultra Low On-Resistance ►Dynamic dv/dt Rating 175°C ►Operating ...
2024-12-09 22:38:38
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... l Fast Switching l Fully Avalanche Rated Key Specifications: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced ...
2024-12-09 22:38:38
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ULN2003A Programming Ic Chips High Voltage , High Current DarliCM GROUPon Transistor Arrays The seven NPN DarliCM GROUPon connected transistors in ...
2024-12-09 22:42:04
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