2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Brand Name	NEC
Model Number	2SB1261
Place of Origin	CHINA
Minimum Order Quantity	10 PCS
Price	Negotiation
Payment Terms	T/T, Western Union ， ESCROW
Supply Ability	10000PCS
Delivery Time	STOCK
Packaging Details	BAG
Description	Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
Collector-Base Voltage	-60V
Collector-Emitter Voltage	-60V
Emitter-Base Voltage	-7V
Collector Current-Continuous	-3A
Collector Power Dissipation @TC=25℃	10W
Junction Temperature	150℃
Storage Temperature	-55~150℃
PACKAGE	TO126

Detailed Product Description

2SB1261 General Purpose Rectifier Diode PNP Silicon Epitaxial Transistors

DESCRIPTION

·Low Collector Saturation Voltage

·High Power Dissipation- : PC= 10W(Max)@TC=25℃

·Complement to Type 2SD1899-K

APPLICATIONS

·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.

Product Tags: resistor equipped transistor epitaxial planar pnp transistor

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