IRFP044N HEXFET® Power MOSFET
• Advanced Process Technology
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole.
Absolute Maximum Ratings
| | Parameter | Max. | Units |
|---|
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 53 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 37 | A |
| IDM | Pulsed Drain Current | 180 | A |
| PD @TC = 25°C | Power Dissipation | 120 | W |
| | Linear Derating Factor | 0.77 | W/°C |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy
| 230 | mJ |
| IAR | Avalanche Current | 28 | A |
| EAR | Repetitive Avalanche Energy | 12 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
| | Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C |
| | Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) | |
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