201 - 210 of 347
npn general purpose transistors
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...Transistor MOSFET -30V P-Channel Power Trench Features Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max r = 18 mΩ at V = -4.5 V, I = -8.5 A DS...
2024-12-09 22:37:47
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...Transistor MOSFET MOSFET; -80V P-Chan PowerTrench Features MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A MaxrDS(on) =233mΩatVGS =-4.5V,ID =-1.9A High ...
2024-12-09 22:37:47
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... than other MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant General Description This N...
2024-12-09 22:37:47
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...Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench Features Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon ...
2024-12-09 22:37:47
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... for low rDS(on) HBM ESD Protection Level of 8kV Typical(Note 3) MSL1 Robust Package Design RoHS Compliant General Description The FDMS6681Z has ...
2024-12-09 22:37:47
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FDT3612 Mosfet Power Transistor MOSFET 100V NCh PowerTrench General Description This N-Channel MOSFET has been designed specifically to improve the ...
2024-12-09 22:37:47
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... Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is ...
2024-12-09 22:37:59
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LD1086V33 Transistor to-3P Electronic IC Chip power ic chip IC Electronics 1.5A LOW DROP POSITIVE VOLTAGE REGULATOR ADJUSTABLE AND FIXED General ...
2024-12-09 22:38:38
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...Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection General Description The KA78XXE/KA78XXAE ...
2024-12-09 22:38:38
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AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS...
2024-12-09 22:38:51
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